|
Test
|
Conditions
|
Acceptance Criteria
|
Efficient for
processes of
|
Failure due to |
|
High Temperature Forward/Reverse Bias
(HTFB/HTRB)
|
Tj= 125ºC, V=80%VDRM, 1000h MIL STD
750C.1027 JESD 22-A108
|
0/77
|
Passivation Chip Singulation Moulding
|
Surface charges accumulation. |
|
High Temperature Storage (HTS)
|
Ta=125ºC, 1000h MIL STD 750C.1032
|
0/77
|
Diffusion Passivation Metallization
Die Attach Moulding Quality of row materials. Cleanliness
of processes.
|
Contact degradation. Corrosion. |
|
Intermittent Operating Life (IOL)
|
Tc=55ºC Tj=Tj max 10,000 cycles MIL
STD 750C.1037
|
0/77
|
Metallization Die Attach
|
Contact degradation. |
|
Thermal Cycling
|
-55ºC+150ºC 1,000 cycles MIL STD 750C.1051-2
JESD 22 -A-104
|
0/77
|
Passivation Chip Separation Metallization
Die Attach Moulding
|
Thermal mismatch between chip and package
|
|
Pressure Cooker Autoclave (PCT)
|
T=121ºC, 100%RH, 2 atm., 96h JESD 22
- A-104
|
0/77
|
Metallization Die Attach Moulding
|
Poor hermeticity. Contamination. Corrosion.
|
|
Resistance to Solder Heat
|
T= 260 °C ,10 sec. Preconditioning in
SMD at MSL=1. JESD22-B-106-A
|
0/30
|
Metallization Die Attach Moulding
|
Poor hermeticity. Chip damage. |
|
Solderability
|
T=245ºC, 3 sec. 1h steam aging MIL STD
750C.2026 JESD22-B102D Method 1
|
0/10
|
Electroplating / Dipping
|
Plating conditions or plating material |
|
Lead Strength
|
MIL-STD-750 Method 2006
|
0/10
|
Lead integrity
|
Chip damage. Broken leads. |